APTC80DDA15T3 aptc8 0 dda15t3 ? rev 0 septembe r , 2004 apt website ? http:/ / www.advancedpower.com 1 ? 6 14 13 q1 q2 23 8 22 7 cr 1 cr 2 30 29 32 4 26 3 27 31 16 15 r1 16 15 18 20 23 22 13 11 12 14 8 7 29 30 28 27 26 3 32 31 10 19 2 25 4 all multiple inputs and outputs must be shorted together example: 13/14 ; 29/30 ; 22/23 ? absolute maximum ratings these devices are sensitive to electrostatic discharge. proper handing procedures should be followe d. s ymbol parameter ma x ratings unit v dss drain - source breakdown voltage 800 v t c = 25c 28 i d continuo us drain current t c = 80c 21 i dm pulsed drain current 110 a v gs gate - source voltage 30 v r dson drain - source on resistance 150 m ? p d maximum power dissipation t c = 25c 277 w i ar avalanche current (repetitive and non repetitive) 24 a e ar repetitive avalanche energy 0.5 e as single pulse avalanche energy 670 mj v dss = 800v r dson = 150m ? max @ tj = 25c i d = 28a @ tc = 25c applicatio n ? ac and dc motor control ? switched mode power supplies ? power factor correction features ? - ul tra low r dson - low miller capacitance - ul tra low gate charge - avalanche energy rated - very rugged ? kelvin source for easy drive ? very low stray inductance - symmetrical design ? internal thermistor for temperature monitoring ? high level of integration benefits ? outsta ndi ng perfor ma nce at hi gh freq ue nc y operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? each leg can be easily paralleled to achieve a single boost of twice the current capab ility d ual boost choppe r super junction mosfet p owe r m odule
APTC80DDA15T3 aptc8 0 dda15t3 ? rev 0 septembe r , 2004 apt website ? http:/ / www.advancedpower.com 2 ? 6 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit bv dss drain - source breakdown voltage v gs = 0v, i d = 375a 800 v v gs = 0v,v ds = 800v t j = 25c 50 i dss zero gate voltage drain current v gs = 0v,v ds = 800v t j = 125c 375 a r ds(on) drain ? source on resistance v gs = 10v, i d = 14a 150 m ? v gs(th) gate threshold voltage v gs = v ds , i d = 2ma 2.1 3 3.9 v i gs s gate ? source leakage current v gs = 20 v, v ds = 0v 150 na dynamic characteristics symbol characteristic test conditions min typ max unit c is s input capacitance 4507 c oss output capacitance 2092 c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1mhz 108 pf q g total gate charge 180 q gs gate ? source charge 22 q gd gate ? drain charge v gs = 10v v bus = 400v i d = 28a 90 nc t d(on) tur n-o n delay ti me 10 t r rise time 13 t d(off) turn-off delay time 83 t f fall time inductive switching @125c v gs = 15v v bus = 533v i d = 28a r g = 2.5 ? 35 ns e on tur n-o n switchi ng energy x 486 e off turn-off switching energy y inductive switching @ 25c v gs = 15v, v bus = 533v i d = 28a, r g = 2.5 ? 278 j e on tur n-o n switchi ng energy x 850 e off turn-off switching energy y inductive switching @ 125c v gs = 15v, v bus = 533v i d = 28a, r g = 2.5 ? 342 j diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1000 v t j = 25c 250 i rm maximum reverse leakage current v r =1000v t j = 125c 500 a i f(a v) maximum average forward current 50% duty cycle t c = 100c 60 a i f = 60a 1.9 2.5 i f = 120a 2.2 v f diode forward voltage i f = 60a t j = 125c 1.7 v t j = 25c 280 t rr reverse recovery time t j = 125c 350 ns t j = 25c 760 q rr reverse recovery charge i f = 60a v r = 667v di/dt=200a/s t j = 125c 3600 nc x e on includes diode reverse recovery. y in accordance with jedec standard jesd24-1.
APTC80DDA15T3 aptc8 0 dda15t3 ? rev 0 septembe r , 2004 apt website ? http:/ / www.advancedpower.com 3 ? 6 thermal and package characteristics symbol characteristic min typ max unit igbt 0.45 r thjc junction to case diode 0.9 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 4.7 n.m wt package weight 110 g temperature sensor ntc symbol characteristic min typ max unit r 25 resistance @ 25c 68 k ? b 25/85 t 25 = 298.16 k 4080 k ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 package outline 17 12 28 1 t: thermistor temperature r t : thermistor value at t
APTC80DDA15T3 aptc8 0 dda15t3 ? rev 0 septembe r , 2004 apt website ? http:/ / www.advancedpower.com 4 ? 6 typical performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.00001 0.0001 0.001 0.01 0.1 1 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration 4v 4.5v 5v 5.5v 6v 6.5v 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 v ds , drain to source voltage (v) i d , drain current (a) v gs =15&10v low voltage output characteristics transfert characteristics t j =-55c t j =25c t j =1 25 c 0 20 40 60 80 100 012345678 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d (on)xrds(on)max 250s pulse test @ < 0.5 duty cycle r ds(on) vs drain current v gs =10v v gs =20v 0.8 0.9 1 1.1 1.2 1.3 1.4 0 102030405060 i d , drain current (a) r ds (on) drain to source on resistance normalized to v gs =10v @ 14a 0 5 10 15 20 25 30 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature
APTC80DDA15T3 aptc8 0 dda15t3 ? rev 0 septembe r , 2004 apt website ? http:/ / www.advancedpower.com 5 ? 6 0.90 0.95 1.00 1.05 1.10 1.15 -50 0 50 100 150 t j , junction temperature (c) bv dss , drain to source breakdown volta g e ( normalized ) breakdown voltage vs temperature on resistance vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 0 50 100 150 t j , junction temperature (c) r ds (on), drain to source on resistance (normalized) v gs =10v i d = 14a threshold voltage vs temperature 0.7 0.8 0.9 1.0 1.1 1.2 -50 0 50 100 150 t c , case tem per ature (c) v gs (th), threshold voltage (normalized) maximum safe operating area 100ms 10ms 1ms 100s 0 1 10 100 1000 1 10 100 1000 v ds , drain to source voltage (v) i d , drain current (a) limited by r d so n single pulse t j =150c ciss crss coss 10 100 1000 10000 100000 0 1020304050 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage v ds =160v v ds =400v v ds =640v 0 2 4 6 8 10 12 14 16 0 40 80 120 160 200 gate charge (nc) gate charge vs gate to source voltage v gs , gate to source voltage (v) i d =28a t j =25c
APTC80DDA15T3 aptc8 0 dda15t3 ? rev 0 septembe r , 2004 apt website ? http:/ / www.advancedpower.com 6 ? 6 delay times vs current t d(on) t d(off) 0 20 40 60 80 100 10 20 30 40 50 i d , drain current (a) td(on) and td(off) (ns) v ds =533v r g =2.5 ? t j =125c l=100h rise and fall times vs current t r t f 0 10 20 30 40 50 10 20 30 40 50 i d , drain current (a) t r and t f (ns) v ds =533v r g =2.5 ? t j =125c l=100h switching energy vs current e on e off 0 300 600 900 1200 1500 10 20 30 40 50 i d , drain current (a) eon and eoff (j) v ds =533v r g =2.5 ? t j =125c l=100h e on e off 0 500 1000 1500 2000 2500 0 5 10 15 20 25 gate resistance (ohms) switching energy (j) switching energy vs gate resistance v ds =533v i d =28a t j =125c l=100h hard switching zcs zvs 0 50 100 150 200 250 300 350 400 6 8 10 12 14 16 18 20 22 24 26 i d , drain current (a) frequency (khz) operating frequency vs drain curren t v ds =533v d=50% r g =2.5 ? t j =125c t c =125c t j =25c t j =150c 1 10 100 1000 0.2 0.6 1 1.4 1.8 v sd , source to drain voltage (v) i dr , reverse drain current (a) source to drain diode forward voltage ?coolmos? comprise a new family of transistors developed by infineon technologies ag. ?coolmos? is a trademark of infineon technologies ag?. apt re s e rves the rig ht to c ha nge , witho ut notice , the s pe cificatio ns and info rma tio n co nta ine d he re in apt's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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